IRF3808

Application· Integrated Starter Alternator·42 Volts Automotive Electrical SystemsSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 140 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 97 IDM Pulsed Drain Current 550 ...

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IRF3808 Picture
SeekIC No. : 004376481 Detail

IRF3808: Application· Integrated Starter Alternator·42 Volts Automotive Electrical SystemsSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 140 A...

floor Price/Ceiling Price

Part Number:
IRF3808
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Application

· Integrated Starter Alternator
·42 Volts Automotive Electrical Systems



Specifications

 
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
140
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
97
IDM Pulsed Drain Current
550
PD @TC = 25°C Power Dissipation
330
W
  Linear Derating Factor
2.2
W/°C
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
430
mJ
IAR Avalanche Current
82
A
EAR Repetitive Avalanche Energy
See Fig.12a, 12b, 15, 16
mJ
dv/dt Peak Diode Recovery dv/dt
5.5
V/ns

TJ
TSTG

Operating Junction and
Storage Temperature Range
-55 to + 175
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )



Description

Designed specifically for Automotive applications of the IRF3808, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET of the IRF3808 are a 175°C junction operating temperature, low RJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications.




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