IRF3805S

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Power - Max: 330W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
Gate Charge (Qg) @ Vgs: 290nC @ 10V
Input Capacitance (Ciss) @ Vds: 7960pF @ 25V


Features:

·Advanced Process Technology
·Ultra Low On-Resistance
·175°C Operating Temperature
·Fast Switching
·Repetitive Avalanche Allowed up to Tjmax


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V (Silicon Limited)	220	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	160	A
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V (Package limited)	75	A
IDM	Pulsed Drain Current	890	A
PD @TC = 25°C	Maximum Power Dissipation	130	W
	Linear Derating Factor	2.2	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	730	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	940	mJ
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ , TSTG	Junction and Storage Temperature Range	-55 to +175	°C
	Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw	300 (1.6mm from case) 10 lbf?in (1.1N?m)	°C

Description

Specifically designed for Automotive applications of the IRF3805S,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF3805S combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.