Position: Home  > All Categories> Integrated Circuits (ICs) > IRF3805S-7P

IRF3805S-7P

MOSFET N-CH 55V 160A D2PAK7

product image

IRF3805S-7P Picture
See larger image
SeekIC No. : 004376480 Detail

IRF3805S-7P: MOSFET N-CH 55V 160A D2PAK7

IRF3805S-7P Data Sheet

floor Price/Ceiling Price

US $ 2.65~2.65 / Piece | Get Latest Price
Part Number:
IRF3805S-7P
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~100
  • Unit Price
  • $2.65
  • Processing time
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/3/12

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax


Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V(Silicon Limited) 240 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V(See Fig. 9) 170
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package Limited) 160
IDM Pulsed Drain Current 1000
PD @ TC = 25 Max. Power Dissipation 300 W
  Linear Derating Factor 2.0 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 440 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 680
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6 mm from case)
  Mounting torque, 6-32 or M3 screw 10 lbf`in (1`1N?m)  
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
 Limited by TJmax, starting TJ = 25, L=0.043mH, RG = 25, IAS = 140A, VGS =10V.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.


Description

Specifically designed for Automotive applications of the IRF3805S-7P, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF3805S-7P combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRF3805S-7P
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C160A
Rds On (Max) @ Id, Vgs2.6 mOhm @ 140A, 10V
Input Capacitance (Ciss) @ Vds 7960pF @ 25V
Power - Max330W
PackagingBulk
Gate Charge (Qg) @ Vgs290nC @ 10V
Package / CaseD²Pak, TO-263 (7 leads + tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF3805S 7P
IRF3805S7P



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Discrete Semiconductor Products
T508N12TOF
MUR20040
Tapes, Adhesives
803
AC452-2
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Audio Products
HUC1002
WM-64CT
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
View more