Features: ·Advanced Process Technology·Ultra Low On-Resistance·175°C Operating Temperature·Fast Switching·Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 220 A ID @ TC = 100°C Contin...
IRF3805L: Features: ·Advanced Process Technology·Ultra Low On-Resistance·175°C Operating Temperature·Fast Switching·Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @...
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Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 220 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 160 | A |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package limited) | 75 | A |
IDM | Pulsed Drain Current | 890 | A |
PD @TC = 25°C | Maximum Power Dissipation | 130 | W |
Linear Derating Factor | 2.2 | W/°C | |
VGS | Gate-to-Source Voltage | ± 20 | V |
EAS (Thermally limited) | Single Pulse Avalanche Energy | 730 | mJ |
EAS (Tested ) | Single Pulse Avalanche Energy Tested Value | 940 | mJ |
IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
TJ , TSTG | Junction and Storage Temperature Range | -55 to +175 | °C |
Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw |
300 (1.6mm from case) 10 lbf?in (1.1N?m) |
°C |
Specifically designed for Automotive applications of the IRF3805L,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF3805L combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.