IRF3717

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 20A
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Gate Charge (Qg) @ Vgs: 33nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 2890pF @ 10V


Application

· Synchronous MOSFET for Notebook Processor Power
· Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems


Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-to-Source Voltage	± 20
ID @ TA= 25°C	Continuous Drain Current, VGS @ 10V	20	A
ID @ TA= 100°C	Continuous Drain Current, VGS @ 10V	16
IDM	Pulsed Drain Current	160
PD @TA = 25°C	Power Dissipation	2.5	W
PD @TA = 25°C	Power Dissipation	16
	Linear Derating Factor	0.02	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C