IRF3711ZCS

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Input Capacitance (Ciss) @ Vds: 2150pF @ 10V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
Power - Max: 79W
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Gate Charge (Qg) @ Vgs: 24nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 92A


Application

High Frequency Synchronous Buck Converters for Computer Processor Power


Specifications

</TABLE

Symbol	Parameter	Max.	Units
	Linear Derating Factor	0.53	W/
VDS VGS	Drain-Source Voltage Gate-to-Source Voltage	20 ±20	V V
ID @ TC = 25 ID @ TC = 100 IDM	Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current	92 65 380	A
PD @ TC = 25 PD @ TC = 100	Maximum Power Dissipation Maximum Power Dissipation	79 40	W
TJ, TSTG	Operating Junction Storage Temperature Range	-55 ~ +175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)