IRF3711ZCLPBF

MOSFET N-CH 20V 92A TO-262

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SeekIC No. : 003433522 Detail

IRF3711ZCLPBF: MOSFET N-CH 20V 92A TO-262

floor Price/Ceiling Price

US $ .73~.73 / Piece | Get Latest Price
Part Number:
IRF3711ZCLPBF
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~400
  • Unit Price
  • $.73
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 92A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) @ Vgs: 24nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2150pF @ 10V
Power - Max: 79W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) @ Vds: 2150pF @ 10V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
Power - Max: 79W
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Gate Charge (Qg) @ Vgs: 24nC @ 4.5V
Supplier Device Package: TO-262
Current - Continuous Drain (Id) @ 25° C: 92A


Application

· High Frequency Synchronous Buck Converters for Computer Processor Power
· Lead-Free



Specifications

Parameter
Max.
Units
VDS
Drain-to-Source Voltage
20
V
VGS
Gate-to-Source Voltage
±20
ID @ TC = 25
Continuous Drain Current,VGS@ 10V
92
A
ID @ TC = 100
Continuous Drain Current,VGS@ 10V
65
IDM
Pulsed Drain Current
380
PD @ TC = 25
Maximum Power Dissipation
79
W
PD @ TC =100
Maximum Power Dissipation
40
TJ
Linear Derating Factor
0.53
W/
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)





Parameters:

Technical/Catalog InformationIRF3711ZCLPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C92A
Rds On (Max) @ Id, Vgs6 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 2150pF @ 10V
Power - Max79W
PackagingTube
Gate Charge (Qg) @ Vgs24nC @ 4.5V
Package / CaseTO-262-3 (Straight Leads)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF3711ZCLPBF
IRF3711ZCLPBF



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