IRF3711Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Input Capacitance (Ciss) @ Vds: 2150pF @ 10V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
Power - Max: 79W
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Gate Charge (Qg) @ Vgs: 24nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 92A


Application

· High Frequency Synchronous Buck Converters for Computer Processor Power




Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	20	V
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	92	A
ID @ TA = 100°C	Continuous Drain Current, VGS @ 10V	65	A
IDM	Pulsed Drain Current	380	A
PD @TA = 25°C	Maximum Power Dissipation	79	W
PD @TA = 100°C	Maximum Power Dissipation	40	W
	Linear Derating Factor	0.53	mW/°C
VGS	Gate-to-Source Voltage	± 20	V
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw	300 (1.6mm from case) 10 lbfin (1.1Nm)