IRF3710ZSPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 59 A
Resistance Drain-Source RDS (on) : 18 m Ohms


Features:

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V(Silicon Limited)	59	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V(See Fig. 9)	42
IDM	Pulsed Drain Current	240
PD @TC = 25°C	Power Dissipation	160	W
	Linear Derating Factor	1.1	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy (Thermally Limited)	170	mJ
EAS (tested)	Single Pulse Avalanche Energy Tested Value	200
IAR	Avalanche Current	See Fig.12a,12b,15,16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf`in (1.1N`m)

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the IRF3710ZSPbF are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF3710ZSPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRF3710ZSPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	59A
Rds On (Max) @ Id, Vgs	18 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	2900pF @ 25V
Power - Max	160W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	120nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF3710ZSPBF IRF3710ZSPBF