Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 59 A
Features: Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V(Silicon Limited) |
59 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V(See Fig. 9) |
42 |
| IDM |
Pulsed Drain Current |
240 |
| PD @TC = 25°C |
Power Dissipation |
160 |
W |
| |
Linear Derating Factor |
1.1 |
W/°C |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| EAS |
Single Pulse Avalanche Energy (Thermally Limited) |
170 |
mJ |
| EAS (tested) |
Single Pulse Avalanche Energy Tested Value |
200 |
| IAR |
Avalanche Current |
See Fig.12a,12b,15,16 |
A |
| EAR |
Repetitive Avalanche Energy |
mJ |
|
TJ
TSTG |
Operating Junction and
Storage Temperature Range
|
-55 to + 175 |
°C |
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting torque, 6-32 or M3 srew |
10 lbf`in (1.1N`m) |
DescriptionSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRF3710ZPbF are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make IRF3710ZPbF an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parameters: | Technical/Catalog Information | IRF3710ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 59A |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 35A, 10V |
| Input Capacitance (Ciss) @ Vds | 2900pF @ 25V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 120nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF3710ZPBF
IRF3710ZPBF
|
IRF3710ZPBF Data Sheet
