IRF3710ZL

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 59 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 42 ID Pulsed Drain Current 240 PD @TC = 25°C Power Dissipation 160 W Linear Derating Factor 1.1 ...

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SeekIC No. : 004376476 Detail

IRF3710ZL: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 59 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 42 ID Pulsed Drain...

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Part Number:
IRF3710ZL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/12

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Product Details

Description



Specifications

Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
59
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
42
ID Pulsed Drain Current
240
PD @TC = 25°C Power Dissipation
160
W
Linear Derating Factor
1.1
W/°C
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy (Thermally Limited)
170
mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value
200
IAR Avalanche Current
See Fig.12a,12b,15,16
A
EAR Repetitive Avalanche Energy
mJ

TJ
TSTG

Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)





Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRF3710ZL are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make IRF3710ZL an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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