IRF3710Z

Features:

·Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
· Fast Switching
·Repetitive Avalanche Allowed up to Tjmax


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	59	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	42
ID	Pulsed Drain Current	240
PD @TC = 25°C	Power Dissipation	160	W
	Linear Derating Factor	1.1	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy (Thermally Limited)	170	mJ
EAS (tested)	Single Pulse Avalanche Energy Tested Value	200
IAR	Avalanche Current	See Fig.12a,12b,15,16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of IRF3710Z are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRF3710Z combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.