IRF3710SPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : D2PAK
Packaging : Tube
Continuous Drain Current : 57 A
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 23 mOhms


Features:

·  Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current10V	57	A
ID @ TC = 100	Continuous Drain Current10V	0	A
IDM	Pulsed Drain Current	180	A
PD @ TC = 25	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/
VGS	Gate-to-Source Voltage	±20	V
IAR	Avalanche Current	28	A
EAR	Repetitive Avalanche Energy	20	mJ
dv/dt	Peak Diode Recovery dv/dt	5.8	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Advanced HEXFET^® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit ofIRF3710SPbF, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. IRF3710SPbF provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of IRF3710SPbF low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRF3710L) is available for low-profile applications.

Parameters:

Technical/Catalog Information	IRF3710SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	57A
Rds On (Max) @ Id, Vgs	23 mOhm @ 28A, 10V
Input Capacitance (Ciss) @ Vds	3130pF @ 25V
Power - Max	200W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	130nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF3710SPBF IRF3710SPBF