IRF3710PBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 57 A
Gate-Source Breakdown Voltage : 20 V


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Lead-Free




Specifications

Parameter	Symbol	Rating	Unit
Continuous Drain Current, VGS @ 10V,Tc = 25	ID	57	A
Continuous Drain Current, VGS @ 10V,Tc = 100	ID	40	A
Pulsed Drain Current*1	IDM	230	A
Power Dissipation Tc = 25	PD	200	W
Linear Derating Factor		1.3	/W
Gate-to-Source Voltage	VGS	±20	V
Avalanche Current	IAR	28	A
Repetitive Avalanche Energy	EAR	20	mJ
Peak Diode Recovery dv/dt *2	dv/dt	5.8	V/ns
Operating Junction and Storage Temperature Range	TJ,TSTG	-55 to + 175
Soldering Temperature, for 10 seconds	Mounting torque, 6-32 or M3 srew
Mounting torque, 6-32 or M3 srew	10 lbf.in (1.1N.m)

Description

The IRF3710PBF is designed as one kind of HEXFET power MOSFET from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.IRF3710PbF benefit provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Also the TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

Features of the IRF3710PBF are:(1)advanced process technology;(2)ultra low on-resistance;(3)dynamic dv/dt rating;(4)175°C operating temperature;(5)fast switching;(6)fully avalanche rated;(7)lead-free.The absolute maximum ratings of the IRF3710PBF can be summarized as:(1)continuous drain current ID @ Tc=25°C:57 A;(2)continuous drain current ID @ Tc=100°C:40 A;(3)pulsed drain current:230 A;(4)power dissipation:200 W;(5)linear derating factor:1.3 W/°C;(6)gate-to-source voltage:±20 V;(7)avalanche current:28 A;(8)repetitive avalanche energy:20 mJ;(9)peak diode recovery dv/dt:5.8 V/ns;(10)soldering temperature, for 10 seconds:300 (1.6mm from case ) °C;(11)operating junction and storage temperature range:-55 to + 175°C.If you want to know more information such as the electrical characteristics about the IRF3710PBF,please download the datasheet in www.seekic.com or www.chinaicmart.com .

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parameters:

Technical/Catalog Information	IRF3710PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	57A
Rds On (Max) @ Id, Vgs	23 mOhm @ 28A, 10V
Input Capacitance (Ciss) @ Vds	3130pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	130nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF3710PBF IRF3710PBF