Position: Home  > All Categories> Integrated Circuits (ICs) > IRF3710L

IRF3710L

MOSFET N-CH 100V 57A TO-262

product image

IRF3710L Picture
See larger image
SeekIC No. : 003433577 Detail

IRF3710L: MOSFET N-CH 100V 57A TO-262

IRF3710L Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRF3710L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/13

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 57A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 23 mOhm @ 28A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 130nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3130pF @ 25V
Power - Max: 200W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 130nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Current - Continuous Drain (Id) @ 25° C: 57A
Power - Max: 200W
Manufacturer: International Rectifier
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 23 mOhm @ 28A, 10V
Input Capacitance (Ciss) @ Vds: 3130pF @ 25V


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Kits
IT243
UVSC-110-4E1
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Tools
TCP202
G084SN05 V.3
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
View more