MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 87 A | ||
Resistance Drain-Source RDS (on) : | 7.8 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Parameter |
Max. |
Units | |
VDS | Drain-to-Source Voltage |
30 |
V |
VGS | Drain-to-Source Voltage |
± 20 |
|
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
87 |
|
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
62 |
A |
IDM | Pulsed Drain Current |
350 |
|
PD @TC = 25°C | Maximum Power Dissipation |
79 |
W |
PD @TC = 100°C | Maximum Power Dissipation |
40 |
|
Linear Derating Factor |
0.53 |
W/°C | |
TJ | Operating Junction and |
-55 to + 175 |
°C |
TSTG | Storage Temperature Range | ||
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
Mounting Torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |