IRF3709ZCL

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 26nC @ 4.5V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power - Max: 79W
Supplier Device Package: TO-262
Current - Continuous Drain (Id) @ 25° C: 87A
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
Input Capacitance (Ciss) @ Vds: 2130pF @ 15V


Application

· High Frequency Synchronous Buck Converters for Computer Processor Power


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20	V
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	87	A
ID @ TC= 100	Continuous Drain Current, VGS @ 10V	62	A
IDM	Pulsed Drain Current	350	A
PD @ TC= 25	Maximum Power Dissipation	79	W
PD @ TC= 100	Maximum Power Dissipation	40
	Linear Derating Factor	0.53	W/
TJ, TSTG	Operating Junction and Storage Temperature Range	-55 ~ +175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)