MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 90 A | ||
Resistance Drain-Source RDS (on) : | 10.5 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Symbol | Parameter |
Max. |
Units |
VDS | Drain-Source Voltage |
30 |
V
|
VGS | Gate-to-Source Voltage |
±20 | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
90 |
A |
ID @ TC= 100 | Continuous Drain Current, VGS @ 10V |
57 | |
IDM | Pulsed Drain Current |
360 | |
PD @TC = 25 | Maximum Power Dissipation |
120 |
W |
PD @TA = 25 | Maximum Power Dissipation |
3.1 | |
Linear Derating Factor |
0.96 |
mW/ | |
TJ,TSTG | Junction and Storage Temperature Range |
-55 to + 150 |
Technical/Catalog Information | IRF3709SPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 90A |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 2672pF @ 16V |
Power - Max | 120W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 41nC @ 5V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF3709SPBF IRF3709SPBF |