FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Series: HEXFET®
Power - Max: 3.1W
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25° C: 90A
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Gate Charge (Qg) @ Vgs: 41nC @ 5V
Input Capacitance (Ciss) @ Vds: 2672pF @ 16V
Application High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
High Frequency Buck Converters for Server Processor Power Synchronous FET
Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on ImmunitySpecifications
| |
Parameter |
Max. |
Units |
| VDS |
Drain-Source Voltage |
30 |
V |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V… |
90 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V… |
57 |
| IDM |
Pulsed Drain Current |
360 |
| PD @TA = 25°C |
Maximum Power Dissipation |
120 |
W |
| PD @TC = 25°C |
Maximum Power Dissipation |
3.1 |
W |
| |
Linear Derating Factor |
0.96 |
W/°C |
|
TJ TSTG |
Junction and Storage Temperature Range
|
-55 to + 175 |
°C |
IRF3709S Data Sheet
