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IRF3709LPBF

MOSFET

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SeekIC No. : 00157496 Detail

IRF3709LPBF: MOSFET

IRF3709LPBF Data Sheet

floor Price/Ceiling Price

US $ .47~.61 / Piece | Get Latest Price
Part Number:
IRF3709LPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1550
  • 1550~3000
  • 3000~6000
  • Unit Price
  • $.61
  • $.53
  • $.47
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 90 A
Resistance Drain-Source RDS (on) : 10.5 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Continuous Drain Current : 90 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 10.5 mOhms


Features:

  High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
  High Frequency Buck Converters for
Server Processor Power Synchronous FET
  Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
 Lead-Free


Specifications

Symbol Parameter
Max.
Units
VDS Drain-Source Voltage
30
V
VGS Gate-to-Source Voltage
±20
ID @ TC = 25 Continuous Drain Current, VGS @ 10V
90
A
ID @ TC= 100 Continuous Drain Current, VGS @ 10V
57
IDM Pulsed Drain Current
360
PD @TC = 25 Maximum Power Dissipation
120
W
PD @TA = 25 Maximum Power Dissipation
3.1
  Linear Derating Factor
0.96
mW/
TJ,TSTG Junction and Storage Temperature Range
-55 to + 150



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