IRF3709L

MOSFET N-CH 30V 90A TO-262

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SeekIC No. : 003432945 Detail

IRF3709L: MOSFET N-CH 30V 90A TO-262

floor Price/Ceiling Price

US $ .69~.69 / Piece | Get Latest Price
Part Number:
IRF3709L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~350
  • Unit Price
  • $.69
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/3/12

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 90A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 41nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2672pF @ 16V
Power - Max: 3.1W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Series: HEXFET®
Power - Max: 3.1W
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 90A
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Supplier Device Package: TO-262
Gate Charge (Qg) @ Vgs: 41nC @ 5V
Input Capacitance (Ciss) @ Vds: 2672pF @ 16V


Application

 High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
  High Frequency Buck Converters for Server Processor Power Synchronous FET
 Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity



Specifications

 
Parameter
Max.
Units
VDS Drain-Source Voltage
30
V
VGS Gate-to-Source Voltage
± 20
V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V…
90
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V…
57
IDM Pulsed Drain Current
360
PD @TA = 25°C Maximum Power Dissipation
120
W
PD @TC = 25°C Maximum Power Dissipation
3.1
W
  Linear Derating Factor
0.96
W/°C

TJ TSTG

Junction and Storage Temperature Range
-55 to + 175
°C



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