MOSFET MOSFT 30V 59A 9.5mOhm 9.7nC
IRF3707ZLPBF: MOSFET MOSFT 30V 59A 9.5mOhm 9.7nC
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 59 A | ||
Resistance Drain-Source RDS (on) : | 12.5 mOhms | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Symbol | Parameter | Max. | Units |
VDS | Drain-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID @ TC =25 | Continuous Drain Current,VGS @ 10V | 59 | A |
ID @ TC =100 | Continuous Drain Current,VGS @ 10V | 42 | |
IDM | Pulsed Drain Current | 230 | |
PD @ TC =25 | Maximum Power Dissipation | 57 | W |
PD @ TC =100 | Maximum Power Dissipation | 28 | |
Linear Derating Factor | 0.38 | W/ | |
TJ TSTG |
Operating and Junction Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
Mounting torque, 6-32 or M3 screw | 10 lbfin (1.1 Nm) |
Technical/Catalog Information | IRF3707ZLPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 59A |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 21A, 10V |
Input Capacitance (Ciss) @ Vds | 1210pF @ 15V |
Power - Max | 57W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 15nC @ 4.5V |
Package / Case | TO-262-3 (Straight Leads) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF3707ZLPBF IRF3707ZLPBF |