IRF3707S

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Gate Charge (Qg) @ Vgs: 19nC @ 4.5V
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 62A
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V
Power - Max: 87W
Input Capacitance (Ciss) @ Vds: 1990pF @ 15V


Features:

·High Frequency DC-DC  Isolated Converters  with Synchronous Rectification for Telecom and Industrial use
·High Frequency Buck Converters for Computer Processor Power


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-to-Source Voltage	±20	V
ID @ TC =25	Continuous Drain Current,VGS @ 10V	62	A
ID @ TC =70	Continuous Drain Current,VGS @ 10V	52
IDM	Pulsed Drain Current	248
PD @ TC =25	Maximum Power Dissipation	87	W
PD @ TC =70	Maximum Power Dissipation	61	W
	Linear Derating Factor	0.59	W/
TJ TSTG	Junction Storage Temperature Range	-55 to + 175

Description

·Ultra-Low Gate Impedance of the IRF3707S
·Very Low RDS(on)
·Fully Characterized Avalanche Voltage and Current