MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 62 A | ||
Resistance Drain-Source RDS (on) : | 17 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Symbol | Parameter | Max. | Units |
VDS | Drain-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ± 20 | V |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 62 | A |
ID @ TC = 70 | Continuous Drain Current, VGS @ 10V | 52 | |
IDM | Pulsed Drain Current | 248 | |
PD @TC = 25 | Maximum Power Dissipation | 87 | W |
PD @TC = 70 | Maximum Power Dissipation | 61 | W |
Linear Derating Factor | 0.59 | mW/ | |
TJ , TSTG | Junction and Storage Temperature Range | -55 to + 175 |
Technical/Catalog Information | IRF3707PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 62A |
Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 1990pF @ 15V |
Power - Max | 87W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 19nC @ 4.5V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF3707PBF IRF3707PBF |