IRF3706STRR

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
Power - Max: 88W
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 35nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 77A
Input Capacitance (Ciss) @ Vds: 2410pF @ 10V


Parameters:

Technical/Catalog Information	IRF3706STRR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	77A
Rds On (Max) @ Id, Vgs	8.5 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	2410pF @ 10V
Power - Max	88W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	35nC @ 4.5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF3706STRR IRF3706STRR