IRF3706S

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
Packaging: Tube
Power - Max: 88W
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 35nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 77A
Input Capacitance (Ciss) @ Vds: 2410pF @ 10V


Features:

·Ultra-Low Gate Impedance
·Very Low RDS(on)   at 4.5V VGS
·Fully Characterized Avalanche Voltage and Current


Application

·High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
·High Frequency Buck  Converters for Computer Processor Power


Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-to-Source Voltage	±12	V
ID @ TC =25	Continuous Drain Current,VGS @ 10V	77	A
ID @ TC =100	Continuous Drain Current,VGS @ 10V	54
IDM	Pulsed Drain Current	280
PD @ TC =25	Maximum Power Dissipation	88	W
PD @ TC =100	Maximum Power Dissipation	44	W
	Linear Derating Factor	0.59	W/
TJ TSTG	Operating and Junction Storage Temperature Range	-55 to + 175