IRF3704ZCS

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Packaging: Tube
Gate Charge (Qg) @ Vgs: 13nC @ 4.5V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Power - Max: 57W
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 67A
Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 21A, 10V
Input Capacitance (Ciss) @ Vds: 1220pF @ 10V


Application

· High Frequency Synchronous Buck Converters for Computer Processor Power


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-to-Source Voltage	± 20	V
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	67	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	47
IDM	Pulsed Drain Current	260
PD @TC = 25	Maximum Power Dissipation	57	W
PD @TC = 100	Maximum Power Dissipation	28	W
	Linear Derating Factor	0.38	mW/
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)