MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 210 A | ||
Resistance Drain-Source RDS (on) : | 2.8 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Parameter | Symbol | Rating | Unit |
Continuous Drain Current, VGS @ -10V,Tc = 25 | ID | 210 | A |
Continuous Drain Current, VGS @ -10V,Tc = 100 | ID | 100 | A |
Pulsed Drain Current*1 | IDM | 1000 | A |
Power Dissipation Ta = 25 | PD | 230 | W |
Power Dissipation Tc = 25 | PD | 3.8 | W |
Linear Derating Factor | 1.5 | /W | |
Gate-to-Source Voltage | VGS | ±20 | V |
Peak Diode Recovery dv/dt *2 | dv/dt | 5.0 | V/ns |
Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to + 175 |
Technical/Catalog Information | IRF3703PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 210A |
Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 76A, 10V |
Input Capacitance (Ciss) @ Vds | 8250pF @ 25V |
Power - Max | 230W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 209nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF3703PBF IRF3703PBF |