IRF3515STRLPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Series: HEXFET®
Drain to Source Voltage (Vdss): 150V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) @ Vgs: 107nC @ 10V
Packaging: Cut Tape (CT)
Supplier Device Package: D2PAK
Current - Continuous Drain (Id) @ 25° C: 41A
Power - Max: 200W
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds: 2260pF @ 25V


Parameters:

Technical/Catalog Information	IRF3515STRLPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	41A
Rds On (Max) @ Id, Vgs	45 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	2260pF @ 25V
Power - Max	200W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	107nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF3515STRLPBF IRF3515STRLPBF IRF3515STRLPBFCT ND IRF3515STRLPBFCTND IRF3515STRLPBFCT