IRF3315LPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 21A
Gate Charge (Qg) @ Vgs: 95nC @ 10V
Drain to Source Voltage (Vdss): 150V
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 1300pF @ 25V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: International Rectifier
Power - Max: 3.8W
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V


Parameters:

Technical/Catalog Information	IRF3315LPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	82 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	1300pF @ 25V
Power - Max	3.8W
Packaging	Tube
Gate Charge (Qg) @ Vgs	95nC @ 10V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF3315LPBF IRF3315LPBF