Position: Home  > All Categories> Integrated Circuits (ICs) > IRF3315LPBF

IRF3315LPBF

MOSFET N-CH 150V 21A TO-262

product image

IRF3315LPBF Picture
See larger image
SeekIC No. : 003432272 Detail

IRF3315LPBF: MOSFET N-CH 150V 21A TO-262

IRF3315LPBF Data Sheet

floor Price/Ceiling Price

US $ .55~1.47 / Piece | Get Latest Price
Part Number:
IRF3315LPBF
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~10000
  • Unit Price
  • $1.47
  • $.95
  • $.73
  • $.69
  • $.65
  • $.62
  • $.59
  • $.55
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 150V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 21A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 95nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1300pF @ 25V
Power - Max: 3.8W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 21A
Gate Charge (Qg) @ Vgs: 95nC @ 10V
Drain to Source Voltage (Vdss): 150V
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 1300pF @ 25V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: International Rectifier
Power - Max: 3.8W
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V


Parameters:

Technical/Catalog InformationIRF3315LPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs82 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds 1300pF @ 25V
Power - Max3.8W
PackagingTube
Gate Charge (Qg) @ Vgs95nC @ 10V
Package / CaseTO-262-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF3315LPBF
IRF3315LPBF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Integrated Circuits (ICs)
TA8435H
1MB12-140
LED Products
LM24P20
KCG057QV1DB-G770
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Tapes, Adhesives
803
AC452-2
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
View more