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IRF3315LPBF

MOSFET N-CH 150V 21A TO-262

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SeekIC No. : 003432272 Detail

IRF3315LPBF: MOSFET N-CH 150V 21A TO-262

IRF3315LPBF Data Sheet

floor Price/Ceiling Price

US $ .55~1.47 / Piece | Get Latest Price
Part Number:
IRF3315LPBF
Mfg:
Supply Ability:
5000

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  • $1.47
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  • $.73
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  • $.59
  • $.55
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 150V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 21A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 95nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1300pF @ 25V
Power - Max: 3.8W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 21A
Gate Charge (Qg) @ Vgs: 95nC @ 10V
Drain to Source Voltage (Vdss): 150V
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 1300pF @ 25V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: International Rectifier
Power - Max: 3.8W
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V


Parameters:

Technical/Catalog InformationIRF3315LPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs82 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds 1300pF @ 25V
Power - Max3.8W
PackagingTube
Gate Charge (Qg) @ Vgs95nC @ 10V
Package / CaseTO-262-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF3315LPBF
IRF3315LPBF



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