Features: ` Dynamic dv/dt Rating` Current Sense` 175 Operating Temperatur` Fast Switching` Eimple Drive RequirementsSpecifications Parameter Max. Units ID @ TC =25 Continuous Drain Current,VGS @ 10V 17 A ID @ TC =100 Continuous Drain Current,VGS @ 10V 12 IDM Pulsed Drain Cu...
IRCZ24: Features: ` Dynamic dv/dt Rating` Current Sense` 175 Operating Temperatur` Fast Switching` Eimple Drive RequirementsSpecifications Parameter Max. Units ID @ TC =25 Continuous Drain Curr...
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Parameter | Max. | Units | |
ID @ TC =25 | Continuous Drain Current,VGS @ 10V | 17 | A |
ID @ TC =100 | Continuous Drain Current,VGS @ 10V | 12 | |
IDM | Pulsed Drain Current | 68 | |
ID @ TC =100 | Power Dissipation | 60 | W |
Linear Derating Factor | 0.40 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 6.0 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 4.5 | A |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
Mounting Torque, 6-32 or screw | 10 lbf.in (1.1 N.m) |
Third Generation HEXFETs of the IRCZ24 from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness.
The HEXSence IRCZ24 provides an accurate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF-seriesequivalent part numbers. The provision of a kelvin source connection effectively eliminates problems of common source inductance when the HEXSence is used as a fast, high-current switch in non current-sensing applications.