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IRC530PBF

MOSFET N-CH 100V 14A TO-220-5

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SeekIC No. : 003431862 Detail

IRC530PBF: MOSFET N-CH 100V 14A TO-220-5

IRC530PBF Data Sheet

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Part Number:
IRC530PBF
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Series: HEXFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Current Sensing Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 14A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 26nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 700pF @ 25V
Power - Max: 88W Mounting Type: Through Hole
Package / Case: TO-220-5 Supplier Device Package: TO-220-5    

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 14A
Gate Charge (Qg) @ Vgs: 26nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V
Power - Max: 88W
Input Capacitance (Ciss) @ Vds: 700pF @ 25V
FET Feature: Current Sensing
Package / Case: TO-220-5
Supplier Device Package: TO-220-5


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