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IR53H420-P2

Features: ·Output power MOSFETs in half-bridge configuration·High side gate drive designed for bootstrap operation·Bootstrap diode integrated into package (HD type)·Tighter initial deadtime control·Low temperature coefficient deadtime·15.6V zener clamped Vcc for offline operation·Half-bridge outpu...

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SeekIC No. : 004376298 Detail

IR53H420-P2: Features: ·Output power MOSFETs in half-bridge configuration·High side gate drive designed for bootstrap operation·Bootstrap diode integrated into package (HD type)·Tighter initial deadtime control·...

IR53H420-P2 Data Sheet

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Part Number:
IR53H420-P2
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Output power MOSFETs in half-bridge configuration
·High side gate drive designed for bootstrap operation
·Bootstrap diode integrated into package (HD type)
·Tighter initial deadtime control
·Low temperature coefficient deadtime
·15.6V zener clamped Vcc for offline operation
·Half-bridge output is out of phase with RT
·True micropower startup
·Shutdown feature (1/6th VCC ) on CT  lead
·Increased undervoltage lockout hysteresis (1Volt)
·Lower power level-shifting circuit
·Lower di/dt gate drive for better noise immunity
·Excellent latch immunity on all inputs and outputs
·ESD protection on all leads
·Constant VO  pulse width at startup
·Heatsink package version (P2 type)


Pinout

Connection Diagram


Specifications

Symbol Definition Minimum Maximum Units
VIN High voltage supply - 0.3 500 V
VB High side floating supply VO - 0.3 VO + 25
VO Half-bridge output - 0.3 VIN + 0.3
VRT RT voltage - 0.3 VCC + 0.3
VCT CT voltage - 0.3 VCC + 0.3
Icc Supply current (note 1) - 25 mA
IRT RT output current - 5 5
dV/dt Peak diode recovery - 3.50 V/ns
PD Package power dissipation @ TA +25

   - 2 W
-P2 - 3
RthJA Thermal resistance, junction to ambient
   - 60 /W
-P2 - 40
RthJC Thermal resistance, junction to case
(heatsink)		 -P2 - 20
  -
TJ Junction temperature -55 150
TS Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) - 300



Description

The IR53H420-P2 are complete high voltage, high speed, self-oscillating half-bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package con- struction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit of the IR53H420-P2 has a zener clamp to simplify offline opera- tion. The output features two HEXFETs in a half-bridge con- figuration with an internally set deadtime designed for mini- mum cross-conduction in the half-bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can oper- ate up to the VIN (max) rating.




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