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IR51H320

Features: · Output Power MOSFETs in half-bridge configuration· High side gate drive designed for bootstrap operation· Bootstrap diode integrated into package (HD type)· Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us· Internal oscillato...

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SeekIC No. : 004376288 Detail

IR51H320: Features: · Output Power MOSFETs in half-bridge configuration· High side gate drive designed for bootstrap operation· Bootstrap diode integrated into package (HD type)· Accurate timing control for b...

IR51H320 Data Sheet

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Part Number:
IR51H320
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Output Power MOSFETs in half-bridge configuration
· High side gate drive designed for bootstrap operation
· Bootstrap diode integrated into package (HD type)
· Accurate timing control for both Power MOSFETs
    Matched delay to get 50% duty cycle
    Matched deadtime of 1.2us
· Internal oscillator with programmable frequency
· 15.6V Zener clamped Vcc for offline operation
· Half-bridge output is out of phase with RT
· Micropower startup


Specifications

Symbol Definition Minimum Maximum Units
VIN High voltage supply -224 - 0.3 250 V
-320 - 0.3 400
-420 - 0.3 500
VB High side floating supply Vo - 0.3 Vo +2.5
VO Half-bridge output -0.3 VIN + 0.3
VRT RT voltage -0.3 Vcc + 0.3
VCT CT voltage -0.3 Vcc + 0.3
Icc Supply current (note 1) - 25 mA
IRT RT output current - 5 5
dV/dt Peak diode recovery - 3.5 V/ns
PD Package power dissipation @ TA +25°C - 2.00 W
RthJA Thermal resistance, junction to ambient - 60 /W
TJ Junction temperature -55 150
TS
 Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) - 300



Description

The IR51H320 are complete high voltage, high speed, selfoscillating half-bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays of the IR51H320 for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to 500 volts.




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