IR2155

Series: -
Type: -
On-State Resistance: -
Current - Output / Channel: -
Current - Peak Output: -
Number of Outputs: 2
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Configurations: 1
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Delay Time: -
Supplier Device Package: 8-DIP
High Side Voltage - Max (Bootstrap): 600V
Manufacturer: International Rectifier
Voltage - Supply: 10 V ~ 20 V
Input Type: Self Oscillating
Current - Peak: 250mA


Features:

· Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
· Undervoltage lockout
·Programmable oscillator frequency
·Matched propagation delay for both channels
·Micropower supply startup current of 125 µA typ.
·Low side output in phase with RT


Pinout




Specifications

Symbol	Definition		Min.	Max.	Units
VB	High Side Floating Supply Voltage		-0.3	625	V
VS	High Side Floating Supply Offset Voltage		VB - 25	VB + 0.3
VHO	High Side Floating Output Voltage		VS - 0.3	VB + 0.3
VLO	Low Side Output Voltage		-0.3	VCC + 0.3
VRT	RT Voltage		-0.3	VCC + 0.3
VCT	CT Voltage		-0.3	VCC + 0.3
ICC	Supply Current (Note 1)		-	25	mA
IRT	RT Output Current		-5	5
dVs/dt	Allowable Offset Supply Voltage Transient		-	50	V/ns
PD	Package Power Dissipation @ TA +25°C	(8 Lead DIP)	-	1.0	W
		(8 Lead SOIC)	-	0.625
RJA	Thermal Resistance, Junction to Ambient	(8 Lead DIP)	-	125	/W
		(8 Lead SOIC)	-	200
TJ	Junction Temperature		-	150
TS	Storage Temperature		-55	150
TL	Lead Temperature (Soldering, 10 seconds)		-	300

Description

The IR2155 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front end features a programmable oscillator which is similar to the 555 timer. The output drivers feature a high pulse current buffer stage and an internal deadtime designed for minimum driver cross-conduction. Propagation delays for the two channels of the IR2155 are matched to simplify use in 50% duty cycle applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration that operates off a high voltage rail up to 600 volts.

Parameters:

Technical/Catalog Information	IR2155
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	Half Bridge
Voltage - Supply	10 V ~ 20 V
Current - Peak	250mA
Delay Time	-
Package / Case	8-DIP (300 mil)
Packaging	Tube
Number of Outputs	2
Input Type	Self Oscillating
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	600V
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IR2155 IR2155