Features: · Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune· Undervoltage lockout· Programmable oscillator frequency · Matched propagation delay for both channels· Micropower supply startup current of 90 µA.· Sh...
IR2153Z: Features: · Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune· Undervoltage lockout· Programmable oscillator frequency ...
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Symbol |
Parameter |
Min. |
Max. |
Units |
VB |
High Side Floating Supply Voltage |
-0.3 |
625 |
|
VS |
High Side Floating Supply Offset Voltage |
VB - 25 |
VB + 0.3 |
V |
VHO |
High Side Floating Output Voltage |
VS - 0.3 |
VB + 0.3 | |
VLO |
Low Side Output Voltage |
-0.3 |
VCC + 0.3 | |
VRT |
RT Voltage |
-0.3 |
VCC + 0.3 | |
VCT |
CT Voltage |
-0.3 |
VCC + 0.3 | |
ICC |
Supply Current (Note 1) |
- |
25 | |
IRT |
RT Output Current |
-5 |
5 |
mA |
dVs/dt |
Allowable Offset Supply Voltage Transient |
- |
50 |
V/ns |
PD |
Package Power Dissipation @ TA £ +25°C |
- |
1.0 |
W |
RthJA |
Thermal Resistance, Junction to Ambient |
- |
100 |
°C/W |
TJ |
Junction Temperature |
-55 |
125 |
|
TS |
Storage Temperature |
-55 |
150 |
°C |
TL |
Lead Temperature (Soldering, 10 seconds) |
- |
300 |
The IR2153Z is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front end features a program-mable oscillator which is similar to the 555 timer. The output drivers of the IR2153Z feature a high pulse current buffer stage and an internal deadtime designed for minimum driver cross-conduction. Propagation delays for the two channels are matched to simplify use in 50% duty cycle applications.The floating channel of the IR2153Z can be used to drive an N-channel power MOSFET or IGBT in the high side configuration that operates off a high voltage rail up to 600 volts.