IC DRVR HALF BRDG SELF-OSC 8SOIC
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Series: | - | Manufacturer: | International Rectifier |
Configuration: | Half Bridge | Type: | - |
Input Type: | Self Oscillating | Delay Time: | - |
Current - Peak: | 250mA | Package / Case : | TSSOP-14 |
On-State Resistance: | - | Current - Output / Channel: | - |
Number of Configurations: | 1 | Current - Peak Output: | - |
Number of Outputs: | 2 | High Side Voltage - Max (Bootstrap): | 600V |
Voltage - Supply: | 10 V ~ 20 V | Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Surface Mount | Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOICN |
Symbol | Definition | Min. | Max. | Units | |
VB | High Side Floating Supply Voltage | -0.3 | 625 | V | |
VS | High Side Floating Supply Offset Voltage | VB - 25 | VB + 0.3 | ||
VHO | High Side Floating Output Voltage | VS - 0.3 | VB + 0.3 | ||
VLO | Low Side Output Voltage | -0.3 | VCC + 0.3 | ||
VRT | RT Voltage | -0.3 | VCC + 0.3 | ||
VCT | CT Voltage | -0.3 | VCC + 0.3 | ||
ICC | Supply Current (Note 1) | - | 25 | mA | |
IRT | RT Output Current | -5 | 5 | ||
dVs/dt | Allowable Offset Supply Voltage Transient | - | 50 | V/ns | |
PD | Package Power Dissipation @ TA +25°C | (8 Lead DIP) | - | 1.0 | W |
(8 Lead SOIC) | - | 0.625 | |||
RJA | Thermal Resistance, Junction to Ambient | (8 Lead DIP) | - | 125 | /W |
(8 Lead SOIC) | - | 200 | |||
TJ | Junction Temperature | -55 | 150 | ||
TS | Storage Temperature | -55 | 150 | ||
TL | Lead Temperature (Soldering, 10 seconds) | - | 300 |
The IR21531S are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs of the IR21531S can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity of the IR21531S has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Technical/Catalog Information | IR21531S |
Vendor | International Rectifier |
Category | Integrated Circuits (ICs) |
Configuration | Half Bridge |
Voltage - Supply | 10 V ~ 20 V |
Current - Peak | 250mA |
Delay Time | - |
Package / Case | 8-SOIC (3.9mm Width) |
Packaging | Tube |
Number of Outputs | 2 |
Input Type | Self Oscillating |
Number of Configurations | 1 |
Operating Temperature | -40°C ~ 125°C |
High Side Voltage - Max (Bootstrap) | 600V |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IR21531S IR21531S |