IR21531D

Series: -
Type: -
On-State Resistance: -
Current - Output / Channel: -
Current - Peak Output: -
Number of Outputs: 2
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Configurations: 1
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Delay Time: -
Supplier Device Package: 8-DIP
High Side Voltage - Max (Bootstrap): 600V
Manufacturer: International Rectifier
Voltage - Supply: 10 V ~ 20 V
Input Type: Self Oscillating
Current - Peak: 250mA


Features:

• Integrated 600V half-bridge gate driver
• 15.6V zener clamp on Vcc
• True micropower start up
• Tighter initial deadtime control
• Low temperature coefficient deadtime
• Shutdown feature (1/6th Vcc) on CT pin
• Increased undervoltage lockout Hysteresis (1V)
• Lower power level-shifting circuit
• Constant LO, HO pulse widths at startup
• Lower di/dt gate driver for better noise immunity
• Low side output in phase with RT
• Internal 50nsec (typ.) bootstrap diode (IR21531D)
• Excellent latch immunity on all inputs and outputs
• ESD protection on all leads
• Also available LEAD_FREE


Pinout




Specifications

Symbol	Definition		Min.	Max.	Units
VB	High Side Floating Supply Voltage		-0.3	625	V
VS	High Side Floating Supply Offset Voltage		VB - 25	VB + 0.3
VHO	High Side Floating Output Voltage		VS - 0.3	VB + 0.3
VLO	Low Side Output Voltage		-0.3	VCC + 0.3
VRT	RT Voltage		-0.3	VCC + 0.3
VCT	CT Voltage		-0.3	VCC + 0.3
ICC	Supply Current (Note 1)		-	25	mA
IRT	RT Output Current		-5	5
dVs/dt	Allowable Offset Supply Voltage Transient		-	50	V/ns
PD	Package Power Dissipation @ TA +25°C	(8 Lead DIP)	-	1.0	W
		(8 Lead SOIC)	-	0.625
RJA	Thermal Resistance, Junction to Ambient	(8 Lead DIP)	-	125	/W
		(8 Lead SOIC)	-	200
TJ	Junction Temperature		-55	150
TS	Storage Temperature		-55	150
TL	Lead Temperature (Soldering, 10 seconds)		-	300

Description

The IR21531D are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR21531D provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity of the IR21531D has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

Parameters:

Technical/Catalog Information	IR21531D
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	Half Bridge
Voltage - Supply	10 V ~ 20 V
Current - Peak	250mA
Delay Time	-
Package / Case	8-DIP (300 mil)
Packaging	Tube
Number of Outputs	2
Input Type	Self Oscillating
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	600V
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IR21531D IR21531D