IR2127

IC MOSFET DRIVER CUR-SENSE 8-DIP

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IR2127 Picture
SeekIC No. : 003564739 Detail

IR2127: IC MOSFET DRIVER CUR-SENSE 8-DIP

floor Price/Ceiling Price

Part Number:
IR2127
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: - Manufacturer: International Rectifier
Configuration: High-Side Type: -
Input Type: Non-Inverting Delay Time: 200ns
Package / Case : TSSOP-14 Current - Peak: 250mA
On-State Resistance: - Current - Output / Channel: -
Number of Configurations: 1 Current - Peak Output: -
Number of Outputs: 1 High Side Voltage - Max (Bootstrap): 600V
Voltage - Supply: 12 V ~ 20 V Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP    

Description

Series: -
Type: -
On-State Resistance: -
Current - Output / Channel: -
Current - Peak Output: -
Delay Time: 200ns
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Configurations: 1
Number of Outputs: 1
Operating Temperature: -40°C ~ 125°C
Input Type: Non-Inverting
Configuration: High-Side
Supplier Device Package: 8-DIP
High Side Voltage - Max (Bootstrap): 600V
Manufacturer: International Rectifier
Voltage - Supply: 12 V ~ 20 V
Current - Peak: 250mA


Features:

·Floating channel designed for bootstrap operation
   Fully operational to +600V
   Tolerant to negative transient voltage
   dV/dt immune
·Gate drive supply range from 10 to 20V
·Undervoltage lockout
·5V Schmitt-triggered input logic
·FAULT lead indicates shutdown has occured
·Output in phase with input



Pinout

  Connection Diagram


Specifications

Symbol Definition Min. Max. Units
VB High Side Floating Supply Voltage -0.3 625 V
VS High Side Floating Offset Voltage VB - 25 VB + 0.3
VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3
VCC Logic Supply Voltage -0.3 25
VIN Logic Input Voltage -0.3 VCC + 0.3
VFLT FAULT Output Voltage -0.3 VCC + 0.3
VCS Current Sense Voltage VS - 0.3 VB + 0.3
dVs/dt Allowable Offset Supply Voltage Transient - 50 V/ns
PD Package Power Dissipation @ TA +25 (8 Lead DIP) - 1.0 W
(8 Lead SOIC) - 0.625
RTHJA Thermal Resistance, Junction to Ambient (8 Lead DIP) - 125 /W
(8 Lead SOIC) - 200
TJ Junction Temperature - 150
TS Storage Temperature -55 150
TL Lead Temperature (Soldering, 10 seconds) - 300



Description

The IR2127 is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum crossconduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts.

 




Parameters:

Technical/Catalog InformationIR2127
VendorInternational Rectifier
CategoryIntegrated Circuits (ICs)
ConfigurationHigh-Side
Voltage - Supply12 V ~ 20 V
Current - Peak250mA
Delay Time200ns
Package / Case8-DIP (300 mil)
PackagingTube
Number of Outputs1
Input TypeNon-Inverting
Number of Configurations1
Operating Temperature-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)600V
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IR2127
IR2127



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