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IR2125Z

Features: · Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune· Gate drive supply range from 12 to 18V· Undervoltage lockout· Current detection and limiting loop to limit driven power transistor current· Error lead indic...

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SeekIC No. : 004376082 Detail

IR2125Z: Features: · Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune· Gate drive supply range from 12 to 18V· Undervoltage loc...

IR2125Z Data Sheet

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Part Number:
IR2125Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative
transient voltage dV/dt immune
· Gate drive supply range from 12 to 18V
· Undervoltage lockout
· Current detection and limiting loop to limit driven power transistor current
· Error lead indicates fault conditions and pro grams shutdown time
· Output in phase with input




Specifications

Symbol
Definition
Min.
Max.
UnitS
VB
 High Side Floating Supply Voltage
-0.3
VS + 20
V
VS
 High Side Floating Supply Offset Voltage
-5
400
VHO
 High Side Floating Output Voltage
VS - 0.3
VB + 0.3
VCC
 Logic Supply Voltage
-0.3
20
VERR
 Error Signal Voltage
-0.3
VCC + 0.3
VCS
 Current Sense Voltage
VS - 0.3
VB + 0.3
VIN
 Logic Input Voltage
-0.3
VCC + 0.3
dVs/dt
 Allowable Offset Supply Voltage Transient
-
50
V/ns
PD
 Package Power Dissipation @ TA £ +25
-
1.0
W
RthJA
 Thermal Resistance, Junction to Ambient
-
100
/W
TJ
 Junction Temperature
-55
125
Ts
 Storage temperature
-55
150
Tsol
 Lead Temperature (Soldering, 10 seconds)
-
300





Description

The IR2125Z is a high voltage, high speed power MOSFET and IGBT driver with over-current limiting protection circuitry. Proprietary GVIC and latch immune CMOS technologies enable ruggedized minilithic consturction. Logic inputs are compatible with standard CMOS or LSTTL outputs. the ouput driver features a high pulse current buffer stage designed for minimum driver cross-conduction.

The protection circuitry of IR2125Z detects over-current in the driven power transistor and limits the gate drive voltage. Cycle by cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting conditions and latched shutdown. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 400 volts.






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