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IR2122S

Features: • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V• Undervoltage lockout• 3.3V, 5V and 15V input logic compatible• FAULT lead indicates sh...

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SeekIC No. : 004376080 Detail

IR2122S: Features: • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune• Gate drive supply range from 10 to 20V•...

IR2122S Data Sheet

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Part Number:
IR2122S
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Floating channel designed for bootstrap operation
   Fully operational to +600V
   Tolerant to negative transient voltage
   dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 3.3V, 5V and 15V input logic compatible
• FAULT lead indicates shutdown has occured
• Output out of phase with input


Pinout

Connection Diagram




Specifications

Symbol Definition Min. Max. Units
VB High Side Floating Supply Voltage -0.3 625 V
VS High Side Floating Offset Voltage VB - 25 VB + 0.3
VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3
VCC Logic Supply Voltage -0.3 25
VIN Logic Input Voltage -0.3 VCC + 0.3
VFLT FAULT Output Voltage -0.3 VCC + 0.3
VCS Current Sense Voltage VS - 0.3 VB + 0.3
dVs/dt Allowable Offset Supply Voltage Transient - 50 V/ns
PD Package Power Dissipation @ TA +25 (8 Lead DIP) - 1.0 W
(8 Lead SOIC) - 0.625
RTHJA Thermal Resistance, Junction to Ambient (8 Lead DIP) - 125 /W
(8 Lead SOIC) - 200
TJ Junction Temperature - 150
TS Storage Temperature -55 150
TL Lead Temperature (Soldering, 10 seconds) - 300



Description

The IR2122(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver of IR2122(S) eatures a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts.




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