IR2117S

IC MOSFET DRIVER SGL-CH 8-SOIC

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SeekIC No. : 003564924 Detail

IR2117S: IC MOSFET DRIVER SGL-CH 8-SOIC

floor Price/Ceiling Price

Part Number:
IR2117S
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: - Manufacturer: International Rectifier
Configuration: High-Side Type: -
Input Type: Non-Inverting Delay Time: 125ns
Package / Case : TSSOP-14 Current - Peak: 250mA
On-State Resistance: - Current - Output / Channel: -
Number of Configurations: 1 Current - Peak Output: -
Number of Outputs: 1 High Side Voltage - Max (Bootstrap): 600V
Voltage - Supply: 10 V ~ 20 V Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOICN    

Description

Series: -
Type: -
On-State Resistance: -
Current - Output / Channel: -
Current - Peak Output: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Configurations: 1
Number of Outputs: 1
Operating Temperature: -40°C ~ 125°C
Input Type: Non-Inverting
Supplier Device Package: 8-SOICN
Configuration: High-Side
High Side Voltage - Max (Bootstrap): 600V
Manufacturer: International Rectifier
Voltage - Supply: 10 V ~ 20 V
Current - Peak: 250mA
Delay Time: 125ns


Features:

• Floating channel designed for bootstrap operation
   Fully operational to +600V
   Tolerant to negative transient voltage
   dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• CMOS Schmitt-triggered inputs with pull-down
• Output in phase with input (IR2117) or out of phase with input (IR2118)
• Also available LEAD-FREE



Pinout

  Connection Diagram


Specifications

Symbol Definition Min. Max. Units
VB High Side Floating Supply Voltage -0.3 625 V
VS High Side Floating Supply Offset Voltage VB - 25 VB + 0.3
VHO High Side Floating Output Voltage VS - 0.3 VB + 0.3
VCC Logic Supply Voltage -0.3 25
VIN Logic Input Voltage -0.3 VCC + 0.3
dVs/dt Allowable Offset Supply Voltage Transient (Figure 2) - 50 V/ns
PD Package Power Dissipation @ TA +25 (8 Lead PDIP) - 1.0 V/ns
(8 Lead SOIC) - 0.625
RthJA Thermal Resistance, Junction to Ambient (8 Lead PDIP) - 125 /W
(8 Lead SOIC) - 200
TJ Junction Temperature - 150
TS
Storage Temperature -55 150
TL Lead Temperature (Soldering, 10 seconds) - 300



Description

The IR2117S is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel of the IR2117S can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.




Parameters:

Technical/Catalog InformationIR2117S
VendorInternational Rectifier
CategoryIntegrated Circuits (ICs)
ConfigurationHigh-Side
Voltage - Supply10 V ~ 20 V
Current - Peak250mA
Delay Time125ns
Package / Case8-SOIC (3.9mm Width)
PackagingTube
Number of Outputs1
Input TypeNon-Inverting
Number of Configurations1
Operating Temperature-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)600V
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IR2117S
IR2117S



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