IR2117

Series: -
Type: -
On-State Resistance: -
Current - Output / Channel: -
Current - Peak Output: -
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Configurations: 1
Number of Outputs: 1
Operating Temperature: -40°C ~ 125°C
Input Type: Non-Inverting
Configuration: High-Side
Supplier Device Package: 8-DIP
High Side Voltage - Max (Bootstrap): 600V
Manufacturer: International Rectifier
Voltage - Supply: 10 V ~ 20 V
Current - Peak: 250mA
Delay Time: 125ns


Features:

·Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
·Gate drive supply range from 10 to 20V
·Undervoltage lockout
·CMOS Schmitt-triggered inputs with pull-down
·Output in phase with input


Pinout




Specifications

	Parameter		Value		Units
Symbol	Definition		Min.	Max.
VB	High Side Floating Supply Voltage		-0.3	625	V
VS	High Side Floating Supply Offset Voltage		VB - 25	VB + 0.3
VHO	High Side Floating Output Voltage		VS - 0.3	VB + 0.3
VCC	Logic Supply Voltage		-0.3	25
VIN	Logic Input Voltage		-0.3	VCC + 0.3
dVs/dt	Allowable Offset Supply Voltage Transient (Figure 2)		-	50	V/ns
PD	Package Power Dissipation @ TA +25	(8 Lead DIP)	-	1.0	V/ns
		(8 Lead SOIC)	-	0.625
RJA	Thermal Resistance, Junction to Ambient	(8 Lead DIP)	-	125	/W
		(8 Lead SOIC)	-	200
TJ	Junction Temperature		-	150
TS	Storage Temperature		-55	150
TL	Lead Temperature (Soldering, 10 seconds)		-	300

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 5 through 8.


Description

The IR2117 is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel of the IR2117 can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.

Parameters:

Technical/Catalog Information	IR2117
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	High-Side
Voltage - Supply	10 V ~ 20 V
Current - Peak	250mA
Delay Time	125ns
Package / Case	8-DIP (300 mil)
Packaging	Tube
Number of Outputs	1
Input Type	Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	600V
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IR2117 IR2117