IR21141SSPBF

Mounting Style : SMD/SMT
Product : Half-Bridge Drivers
Maximum Operating Temperature : + 125 C
Packaging : Tube
Type : High and Low Side Driver
Fall Time : 7 ns
Supply Voltage - Max : 20 V
Package / Case : SOIC-14
Supply Current : 2.5 mA
Supply Voltage - Min : 11.5 V
Rise Time : 24 ns
Maximum Power Dissipation : 1500 mW


Features:

·Floating channel up to +600 V or +1200 V
·Soft over-current shutdown
·Synchronization signal to synchronize shutdown with the other phases
·Integrated desaturation detection circuit
·Two stage turn on output for di/dt control
·Separate pull-up/pull-down output drive pins
·Matched delay outputs
·Undervoltage lockout with hysteresis band
·LEAD-FREE




Pinout






Specifications

Symbol	Definition		Min.	Max.	Units
VS	High side offset voltage		VB - 25	VB + 0.3	V
VB	High side floating supply voltage	(IR2114 or IR21141)	-0.3	625	V
		(IR2214 or IR22141)	-0.3	1225	V
VHO VCC COM VLO VIN	High side floating output voltage (HOP,HON and SSDH) Low side and logic fixed supply voltage Power ground Low side output voltage (LOP, LON and SSDL) Logic input voltage (HIN, LIN and FLT_CLR)		VS- 0.3 -0.3 VCC- 25 VCOM-0.3 VSS -0.3	VB + 0.3 25 VCC + 0.3 VCC + 0.3 VCC + 0.3	V V V V V
VFLT	FAULT input/output voltage (FAULT/SD and SY_FLT)		VSS-0.3	VCC + 0.3	V
VDSH VDSL	High side DS input voltage Low side DS input voltage		VS -3 VCOM -3	VB + 0.3 VCC + 0.3	V V
dVs/dt PD RthJA	Allowable offset voltage slew rate Package power dissipation @ TA 25 Thermal resistance, junction to ambient		- - -	50 1.5 65	V/ns W /W
TJ TS TL	Junction temperature Storage temperature Lead temperature (soldering, 10 seconds)		- -55 -	150 150 300

Description

The IR211(4,41)/IR221(4,41) gate driver family is suited to drive a single half bridge in power switching applications. These drivers provide high gate driving capability (2 A source, 3 A sink) and require low quiescent current, which allows the use of bootstrap power supply techniques in medium power systems. These drivers feature full short circuit protection by means of power transistor desaturation detection and manage all half-bridge faults by smoothly turning off the desaturated transistor through the dedicated soft shutdown pin, therefore preventing over-voltages and reducing EM emissions. In multi-phase systems, the IR211(4,41)/ IR221(4,41) drivers communicate using a dedicated local network (123456789SY_FLT and 123456789FAULT/SD signals) to properly manage phase-to-phase short circuits. The system controller may force shutdown or read device fault state through the 3.3 V compatible CMOS I/O pin (123456789FAULT/SD). To improve the signal immunity from DC-bus noise, the control and power ground use dedicated pins enabling low-side emitter current sensing as well. Undervoltage conditions in floating and low voltage circuits are managed independently.

The IR21141SSPBF is designed as one kind of half-bridge gate driver IC which is suited to drive a single half bridge in power switching applications. This driver provides high gate driving capability (2A source, 3A sink) and require low quiescent current, which allows the use of bootstrap power supply techniques in medium power systems.

IR21141SSPBF  has nine features. (1)Floating channel up to +600V or +1200V. (2)Soft over-current shutdown. (3)Synchronization signal to synchronize shutdown with the other phases. (4)Integrated desaturation detection circuit. (5)Two stage turn on output for di/dt control. (6)Separate pull-up/pull-down output drive pins. (7)Matched delay outputs. (8)Undervoltage lockout with hysteresis band. (9)Lead-free. Those are all the main features.

Some absolute maximum ratings of IR21141SSPBF  have been concluded into several points as follow. (1)Its high side offset voltage would be min Vb-25V and max Vb+0.3V. (2)Its high side floating supply voltage would be min -0.3V and max 625V. (3)Its high side floating output voltage would be min Vs-0.3V and max Vb+0.3V. (4)Its low side and logic fixed supply voltage would be min -0.3V and max 25V. (5)Its power ground would be min Vcc-25V and max Vcc+0.3V. (6)Its low side output voltage would be min Vcom-0.3V and max Vcc+0.3V. (7)Its high side DS input voltage would be min Vs-0.3V and max Vb+0.3V. (8)Its low side DS input voltage would be min Vcom-3V and Vcc+0.3V. (9)Its allowable offset voltage slew rate would be max 50V/ns. (10)Its power package dissipation would be 1.5W. (11)Its thermal resistance junction to ambient would be max 65°C/W. (12)Its junction temperature would be 150°C. (13)Its storage temperature range would be from -55°C to 150°C. (14)Its lead temperature soldering 10 seconds would be max 300°C. And so on. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device. If you have any question or suggestion or want to know more information about IR21141SSPBF  please contact us for details. Thank you!

Parameters:

Technical/Catalog Information	IR21141SSPBF
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	Half Bridge
Voltage - Supply	11.5 V ~ 20 V
Current - Peak	2A
Delay Time	440ns
Package / Case	24-SSOP
Packaging	Tube
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	600V
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IR21141SSPBF IR21141SSPBF