Features: Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic...
IR2113 (S): Features: Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltag...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol |
Definition |
Min. |
Max. |
Units |
VB |
High side floating supply voltage |
-0.3 |
525 |
V |
-0.3 |
625 | |||
VS |
High side floating supply offset voltage |
VB - 25 |
VB + 0.3 | |
VHO |
High side floating output voltage |
VS - 0.3 |
VB + 0.3 | |
VCC |
Low side fixed supply voltage |
-0.3 |
25 | |
VLO |
Low side output voltage |
-0.3 |
VCC + 0.3 | |
VDD |
Logic supply voltage |
-0.3 |
VSS + 25 | |
VSS |
Logic supply offset voltage |
VCC - 25 |
VCC + 0.3 | |
VIN |
Logic input voltage |
VSS - 0.3 |
VDD + 0.3 | |
dVs/dt |
Allowable offset supply voltage transient |
- |
50 |
V/ns |
PD |
Package power dissipation @ TA +25°C (14 lead DIP) |
- |
1.6 |
W |
(16 lead SOIC) |
- |
1.25 | ||
RTHJA |
Thermal resistance, junction to ambient (14 lead DIP) |
- |
75 |
°C/W |
(16 lead SOIC) |
- |
100 | ||
TJ |
Junction temperature |
- |
150 |
°C |
TS |
Storage temperature |
-55 |
150 | |
TL |
Lead temperature (soldering, 10 seconds) |
- |
300 |
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge-dized monolithic construction. Logic inputs are com-patible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse cur-rent buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.