IC MOSFET DRVR HI/LO SIDE 14-DIP
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Series: | - | Manufacturer: | International Rectifier |
Configuration: | High and Low Side, Independent | Type: | - |
Input Type: | Non-Inverting | Delay Time: | 125ns |
Package / Case : | TSSOP-14 | Current - Peak: | 250mA |
On-State Resistance: | - | Current - Output / Channel: | - |
Number of Configurations: | 1 | Current - Peak Output: | - |
Number of Outputs: | 2 | High Side Voltage - Max (Bootstrap): | 600V |
Voltage - Supply: | 10 V ~ 20 V | Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Through Hole | Package / Case: | 14-DIP (0.300", 7.62mm) |
Supplier Device Package: | 14-DIP |
Symbol | Definition | Min. | Max. | Units | |
VB | High Side Floating Supply Voltage | -0.3 | 625 | V | |
VS | High Side Floating Supply Offset Voltage | VB - 25 | VB + 0.3 | ||
VHO | High Side Floating Output Voltage | VS - 0.3 | VB + 0.3 | ||
VCC | Low Side Fixed Supply Voltage | -0.3 | 25 | ||
VLO | Low Side Output Voltage | -0.3 | VCC + 0.3 | ||
VDD | Logic Supply Voltage | -0.3 | VSS + 25 | ||
VSS | Logic Supply Offset Voltage | VCC - 25 | VCC + 0.3 | ||
VIN | Logic Input Voltage (HIN, LIN & SD) | VSS - 0.3 | VDD + 0.3 | ||
dVs/dt | Allowable Offset Supply Voltage Transient (Figure 2) | - | 50 | V/ns | |
PD | Package Power Dissipation @ TA +25 | (14 Lead DIP) | - | 1.6 | W |
(16 Lead SOIC) | - | 1.25 | |||
RTHJA | Thermal Resistance, Junction to Ambient | (14 Lead DIP) | - | 75 | /W |
(16 Lead SOIC) | - | 100 | |||
TJ | Junction Temperature | - | 150 | ||
TS | Storage Temperature | -55 | 150 | ||
TL | Lead Temperature (Soldering, 10 seconds) | - | 300 |
The IR2112(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Technical/Catalog Information | IR2112 |
Vendor | International Rectifier |
Category | Integrated Circuits (ICs) |
Configuration | High and Low Side, Independent |
Voltage - Supply | 10 V ~ 20 V |
Current - Peak | 250mA |
Delay Time | 125ns |
Package / Case | 14-DIP (300 mil) |
Packaging | Tube |
Number of Outputs | 2 |
Input Type | Non-Inverting |
Number of Configurations | 1 |
Operating Temperature | -40°C ~ 125°C |
High Side Voltage - Max (Bootstrap) | 600V |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IR2112 IR2112 |