IR2111S

Series: -
Type: -
On-State Resistance: -
Current - Output / Channel: -
Current - Peak Output: -
Number of Outputs: 2
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Configurations: 1
Operating Temperature: -40°C ~ 125°C
Input Type: Non-Inverting
Supplier Device Package: 8-SOICN
Configuration: High and Low Side, Synchronous
High Side Voltage - Max (Bootstrap): 600V
Manufacturer: International Rectifier
Voltage - Supply: 10 V ~ 20 V
Current - Peak: 250mA
Delay Time: 750ns


Features:

• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels
• Internally set deadtime
• High side output in phase with input
• Also available LEAD-FREE




Pinout






Specifications

Symbol	Definition		Min.	Max.	Units
VB	High side floating supply voltage		-0.3	625	V
VS	High side floating supply offset voltage		VB - 25	VB + 0.3
VHO	High side floating output voltage		VS - 0.3	VB + 0.3
VCC	Low side and logic fixed supply voltage		-0.3	25
VLO	Low side output voltage		-0.3	VCC + 0.3
VIN	Logic input voltage		-0.3	VCC + 0.3
dVS/dt	Allowable offset supply voltage transient(Figure 2)		-	50	V/ns
PD	Package power dissipation @ TA +25	(8 Lead DIP)	-	1.0	W
		(8 Lead SOIC)	-	0.625
RthJA	Thermal resistance, junction to ambient	(8 Lead DIP)	-	125	/W
		(8 Lead SOIC)	-	200
TJ	Junction temperature		-	150
TS	Storage temperature		-55	150
TL	Lead temperature (soldering, 10 seconds)		-	300

Description

The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for halfbridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

The IR2111S is designed as a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for halfbridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs.

IR2111S has eight features. (1)Floating channel designed for bootstrap operation fully operational to +600V tolerant to negative transient voltage dV/dt immune. (2)Gate drive supply range from 10 to 20V. (3)Undervoltage lockout for both channels. (4)CMOS schmitt-triggered inputs with pull-down. (5)Matched propagation delay for both channels. (6)Internally set deadtime. (7)High side output in phase with input. (8)Also available lead-free. Those are all the main features.

Some absolute maximum ratings of IR2111S have been concluded into several points as follow. (1)Its high side floating supply voltage would be min 0.3V and max 625V. (2)Its high side floating supply offset voltage would be min Vb-25V and max Vb+0.3. (3)Its high side floating output voltage would be min Vs-0.3V and max Vb+0.3V. (4)Its low side and logic fixed supply voltage would be min -0.3V and max 25V. (5)Its low side output voltage would be min -0.3V and max Vcc+0.3V. (6)Its logic input voltage would be min -0.3V and max Vcc+0.3V. (7)Its allowable offset supply voltage transient would be max 50V/ns. (8)its package power dissipation would be 0.625W. (9)Its thermal resistance junction to ambient would be 200°C/W. (10)Its junction temperature would be 150°C. (11)Its storage temperature range would be min -55°C and max 150°C. (12)Its lead temperature soldering 10 seconds would be max 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of IR2111S are concluded as follow. (1)Its logic 1 input voltage would be min 6.4V for Vcc=10V. (2)Its logic 0 input voltage would be max 3.8V for Vcc=10V. (3)Its high level output voltage would be max 100mV. (4)Its low level output voltage would be max 100mV. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

Parameters:

Technical/Catalog Information	IR2111S
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	High and Low Side, Synchronous
Voltage - Supply	10 V ~ 20 V
Current - Peak	250mA
Delay Time	750ns
Package / Case	8-SOIC (3.9mm Width)
Packaging	Tube
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	600V
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IR2111S IR2111S