IR2110S

Series: -
Type: -
On-State Resistance: -
Current - Output / Channel: -
Current - Peak Output: -
Number of Outputs: 2
Mounting Type: Surface Mount
Packaging: Tube
Number of Configurations: 1
Operating Temperature: -40°C ~ 125°C
Input Type: Non-Inverting
Delay Time: 120ns
High Side Voltage - Max (Bootstrap): 500V
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC
Current - Peak: 2.5A
Manufacturer: International Rectifier
Voltage - Supply: 10 V ~ 20 V
Configuration: High and Low Side, Independent


Features:

• Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs




Pinout

Specifications

Symbol	Definition		Min.	Max.	Units
VB	High side floating supply voltage	(IR2110)	-0.3	525	V
		(IR2113)	-0.3	625
VS	High side floating supply offset voltage		VB - 25	VB + 0.3
VHO	High side floating output voltage		VS - 0.3	VB + 0.3
VCC	Low side fixed supply voltage		-0.3	25
VLO	Low side output voltage		-0.3	VCC + 0.3
VDD	Logic supply voltage		-0.3	VSS + 25
VSS	Logic supply offset voltage		VCC - 25	VCC + 0.3
VIN	Logic input voltage (HIN, LIN & SD)		VSS - 0.3	VDD + 0.3
dVs/dt	Allowable offset supply voltage transient (figure 2)		-	50	V/ns
PD	Package power dissipation @ TA +25	(14 lead DIP)	-	1.6	W
		(16 lead SOIC)	-	1.25
RTHJA	Thermal resistance, junction to ambient	(14 lead DIP)	-	75	/W
		(16 lead SOIC)	-	100
TJ	Junction temperature		-	150
TS	Storage temperature			150
TL	Lead temperature (soldering, 10 seconds)		-	300

Description

The IR2110S is one member of the IR2110 series.The IR2110 is high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.The output of IR2110S drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.Propagation delays are matched to simplify use in high frequency applications.The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.

Features of the IR2110S are:(1)floating channel designed for bootstrap operation:fully operational to +500V or +600V,tolerant to negative transient voltage dV/dt immune; (2)gate drive supply range from 10 to 20V; (3)undervoltage lockout for both channels; (4)3.3V logic compatible:separate logic supply range from 3.3V to 20V,logic and power ground ±5V offset; (5)CMOS schmitt-triggered inputs with pull-down; (6)cycle by cycle edge-triggered shutdown logic; (7)matched propagation delay for both channels; (8)outputs in phase with inputs.

The absolute maximum ratings of the IR2110S can be summarized as:(1)junction temperature:150;(2)storage temperature:-55 to 150;(3)high side floating supply voltage:-0.3 to 525V;(4)lead temperature (soldering, 10s):+300;(5)low side fixed supply voltage:-0.3 to 25V;(6)logic supply voltage:-0.3 to Vss+25V.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.

Parameters:

Technical/Catalog Information	IR2110S
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	High and Low Side, Independent
Voltage - Supply	10 V ~ 20 V
Current - Peak	2.5A
Delay Time	120ns
Package / Case	16-SOIC (3.9mm Width)
Packaging	Tube
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	500V
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IR2110S IR2110S