Features: ·Floating channel designed for bootstrap operationFully operational to +400VTolerant to negative transient voltage dV/dt immune·Gate drive supply range from 10 to 20V·Undervoltage lockout for both channels·Separate logic supply range from 5 to 20V Logic and power ground ±5V offset·CMOS S...
IR2110L4: Features: ·Floating channel designed for bootstrap operationFully operational to +400VTolerant to negative transient voltage dV/dt immune·Gate drive supply range from 10 to 20V·Undervoltage lockout ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter | Min. | Max. | Units |
VB | High Side Floating Supply Absolute Voltage | -0.5 | VS + 20 | V |
VS | High Side Floating Supply Offset Voltage | - | 400 | |
VHO | High Side Output Voltage | VS -0.5 | VB + 0.5 | |
VCC | Low Side Fixed Supply Voltage |
-0.5 | 20 | |
VLO | Low Side Output Voltage | -0.5 | VCC + 0.5 | |
VDD | Logic Supply Voltage | -0.5 | VSS + 20 | |
VSS | Logic Supply Offset Voltage | VCC - 20 | VCC + 0.5 | |
VIN | Logic Input Voltage (HIN, LIN & SD) | VSS - 0.5 | VDD + 0.5 | |
dVS/dt |
Allowable Offset Supply Voltage Transient (Fig. 16) | - | 50 | V/ns |
PD | Package Power Dissipation @ TA = 25 (Fig. 19) | - | 1.6 | W |
RthJA | Thermal Resistance, Junction to Ambient | - | 75 | /W |
Tj | Junction Temperature |
-55 | 125 | |
TS | Storage Temperature | -55 | 150 | |
TL | Lead Temperature (Soldering, 10 seconds) | - | 300 | |
Weight | 1.5 (typical) | g |
The IR2110L4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts.