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IR2110E6

Features: ·Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune·Gate drive supply range from 10 to 20V·Undervoltage lockout for both channels·Separate logic supply range from 5 to 20V Logic and power ground ±5V offset·CMOS...

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SeekIC No. : 004376071 Detail

IR2110E6: Features: ·Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune·Gate drive supply range from 10 to 20V·Undervoltage lockou...

IR2110E6 Data Sheet

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Part Number:
IR2110E6
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Description



Features:

·Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
·Gate drive supply range from 10 to 20V
·Undervoltage lockout for both channels
·Separate logic supply range from 5 to 20V Logic and power ground ±5V offset
·CMOS Schmitt-triggered inputs with pull-down
·Cycle by cycle edge-triggered shutdown logic
·Matched propagation delay for both channels
·Outputs in phase with inputs


Specifications

Symbol Parameter Min. Max. Units
VB High Side Floating Supply Absolute Voltage -0.5 VS + 20 V
VS High Side Floating Supply Offset Voltage - 400
VHO High Side Output Voltage VS -0.5 VB + 0.5
VCC Low Side Fixed Supply Voltage
 -0.5 20
VLO Low Side Output Voltage -0.5 VCC + 0.5
VDD Logic Supply Voltage -0.5 VSS + 20
VSS Logic Supply Offset Voltage VCC - 20 VCC + 0.5
VIN Logic Input Voltage (HIN, LIN & SD) VSS - 0.5 VDD + 0.5
dVS/dt
 Allowable Offset Supply Voltage Transient (Fig. 16) - 50 V/ns
PD Package Power Dissipation @ TA = 25 (Fig. 19) - 1.6 W
RthJA Thermal Resistance, Junction to Ambient - 125 /W
Tj Junction Temperature
 -55 125
TS Storage Temperature -55 150
TL Package Mounting Surface Temperature 300 (for 5 seconds)
Weight 0.45 (typical) g



Description

The IR2110E6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel of the IR2110E6 can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.




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